Evolution Law of Helium Bubbles in Hastelloy N Alloy on Post-Irradiation Annealing Conditions

نویسندگان

  • Jie Gao
  • Liangman Bao
  • Hefei Huang
  • Yan Li
  • Jianrong Zeng
  • Zhe Liu
  • Renduo Liu
  • Liqun Shi
چکیده

This work reports on the evolution law of helium bubbles in Hastelloy N alloy on post-irradiation annealing conditions. After helium ion irradiation at room temperature and subsequent annealing at 600 °C (1 h), the transmission electron microscopy (TEM) micrograph indicates the presence of helium bubbles with size of 2 nm in the depth range of 0-300 nm. As for the sample further annealed at 850 °C (5 h), on one hand, a "Denuded Zone" (0-38 nm) with rare helium bubbles forms due to the decreased helium concentration. On the other hand, the "Ripening Zone" (38-108 nm) and "Coalescence Zone" (108-350 nm) with huge differences in size and separation of helium bubbles, caused by different coarsening rates, are observed. The mechanisms of "Ostwald ripening" and "migration and coalescence", experimentally proved in this work, may explain these observations.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing

The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He⁺ ions with 1 × 1017 ions/cm² fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irradiated layer distributed with fine helium bubbles was formed with a width of ~170 nm after helium...

متن کامل

Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys

The effect of post-irradiation annealing on the microstructures and mechanical properties of V-4Cr-4Ti alloys was studied. Helium-hydrogen-irradiated sequentially V-4Cr-4Ti alloys at room temperature (RT) were undergone post-irradiation annealing at 450 °C over periods of up to 30 h. These samples were carried out by high-resolution transmission electron microscopy (HRTEM) observation and nanoi...

متن کامل

Microstructural evolution of helium-implanted a-SiC

Helium has a decisive effect on the microstructure of silicon carbide materials after implantation and subsequent annealing. A dense population of bubbles and dislocation loops is already observed at relatively low displacement doses after annealing of helium-implanted a-SiC, while no visible damage appears after irradiation without helium implantation under otherwise equal conditions. The defe...

متن کامل

Effect of Equal Channel Angular Pressing and Annealing Treatment on the Evolution of Microstructure in AlMg0.7Si Aluminum Alloy

In this research, samples of AlMg0.7Si aluminum alloy are deformed up to three passes using equal channel angular pressing (ECAP). Formation of a sub-micron structure after three passes of ECAP is demonstrated. Microstructural stability of the samples is investigated at temperatures of 300-500 °C. At 300 °C, fine recrystallized structure forms after 10 min which remains stable when the ...

متن کامل

The microstructure of Si surface layers after plasma-immersion He+ ion implantation and subsequent thermal annealing1

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+ plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer st...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 9  شماره 

صفحات  -

تاریخ انتشار 2016